Transistor RF, NXP – MRF1K50HR5 LDMOS Transistor

Características Principales

• High drain–source avalanche energy absorption capability.
• Unmatched input and output allowing wide frequency range utilization.
• Device can be used single–ended or in a push–pull configuration.
• Characterized from 30 to 50 V for ease of use.
• Suitable for linear application.
• Integrated ESD protection with greater negative gate–source voltage range for improved Class C operation.
• Recommended driver: MRFE6VS25N (25 W).
• Lower thermal resistance part available: MRF1K50N.
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch.