Transistor RF, MACOM – MRF173

Características Principales

• N–Channel Enhancement Mode MOSFET.
• Low Thermal Resistance.
• Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.).
• Nitride Passivated Die for Enhanced Reliability.
• Ruggedness Tested at Rated Output Power.
• Excellent Thermal Stability, Suite for Class A Operation.
• Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz.