Transistor RF, MACOM – MRF151G 300 W fm transistor

Características Principales

• Guaranteed Performance at 175 MHz, 50 V.
• Nitride Passivated Die for Enhanced Reliability.
• Ruggedness Tested at Rated Output Power.
• Low Thermal Resistance — 0.35°C/W.
• Efficiency — 50%.
• Gain — 14 dB (16 dB Typ).
• Output Power — 300 W.